MOVPE growth of GaP on Si with As initial coverage

Competitive growth mechanisms of AlN on Si (111) by MOVPE

To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved dep...

GaN growth on porous silicon by MOVPE

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...

HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN 75 HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN

For the GaN material system, one reason for the breaking down of the efficiency is the socalled quantum confined Stark effect (QCSE). Since today’s LEDs are grown in the common [0001] (c-)direction, the internal polarization fields are perpendicular to the quantum wells. The cause of these internal fields are spontaneous and piezoelectric polarization. The reason for the latter is mechanical st...

Heteroepitaxy of GaP on Si(100)*

In this article, we analyze the kinetics of heteroepitaxial growth of GaP on Si~100! by pulsed chemical beam epitaxy on the basis of results obtained by real-time optical process monitoring. In view of the large barrier to epitaxial growth on oxygen or carbon contaminated silicon surface elements and the low stacking fault energy for GaP, residual contamination of the silicon surface contribute...

MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode